![]() Where I 0 is the injected current and I th is the lasing threshold current. This formulation requires one equation for the carrier density, and one equation for the photon density in each of the optical cavity modes:ĭ N d t = I e V − N τ n − ∑ μ = 1 μ = M Γ μ G μ P μ ![]() ![]() In the multimode formulation, the rate equations model a laser with multiple optical modes. The rate equations (1)- (2) are veried by the steady state values, leading to 0 Pb Gb 0 1 p + Rsp (Nb ), (23) (24) Ib Nb Gb Pb, e c (Nb ) where the dependence of the spontaneous emission rate Rsp and the carrier lifetime c on the electron number has been made more explicit. The laser diode rate equations can be formulated with more or less complexity to model different aspects of laser diode behavior with varying accuracy. In this notation, we write down the renormalized MaxwellBloch system to describe the class-C laser: E ( t) c P ( t) 1 2 E ( t) i 0 E ( t), 2.1 P ( t) 1 T 2 ( i 1) P ( t) + E ( t) N ( t) i 0 P ( t) 2.2 and N ( t) 1 T p N ( t) 2 c Re ( P ( t) E ( t)). The rate equations may be solved by numerical integration to obtain a time-domain solution, or used to derive a set of steady state or small signal equations to help in further understanding the static and dynamic characteristics of semiconductor lasers. ![]() This system of ordinary differential equations relates the number or density of photons and charge carriers ( electrons) in the device to the injection current and to device and material parameters such as carrier lifetime, photon lifetime, and the optical gain. The laser diode rate equations model the electrical and optical performance of a laser diode.
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